Characterization of epitaxial Si1−yCy layers on Si(001) grown by gas-source molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference8 articles.
1. The mobility of electrons in strained silicon
2. Monte Carlo study of electron transport in strained silicon‐carbon alloy
3. High-electron-mobility Si/SiGe heterostructures: influence of the relaxed SiGe buffer layer
4. Gas source molecular beam epitaxy grown strained-Si films on step-graded relaxed Si1−xGex for MOS applications
5. Epitaxial Growth of Si1-yCy Film by Low Temperature Chemical Vapor Deposition
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1. In-Situ P Doped Epitaxial Si1−xCx Growth Under UHV-CVD;Journal of Nanoscience and Nanotechnology;2014-10-01
2. Epitaxial Growth of Si:C by means of Gas Source MBE;ECS Transactions;2008-10-03
3. In situ arsenic-doped Si1−yCy selective epitaxial growth under atmospheric pressure;Applied Physics Letters;2008-01-28
4. Growth of Strain-Relaxed Si1-yCyFilms with Compositionally Graded Buffer Layers by Gas Source Molecular Beam Epitaxy;Japanese Journal of Applied Physics;2007-04-05
5. Growth of strain relaxed Si1−yCy on Si buffer layer by gas-source MBE;Thin Solid Films;2006-06
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