InGaAs composition monitoring for production MBE by in situ optical-based flux monitor (OFM)-Reference-Cited by-同舟云学术

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InGaAs composition monitoring for production MBE by in situ optical-based flux monitor (OFM)

Published:2003-04 Issue:1-4 Volume:251 Page:124-129
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Pinsukanjana Paul R.,Marquis Jeremy M.,Hubbard Jared,Trivedi Mehul A.,Dickey Roger F.,Tsai Jerry M.-S.,Kuo Sam P.,Kao Philip S.,Kao Yung-Chung

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference12 articles.

1. Measurement of Ga and Al in a molecular‐beam epitaxy chamber by atomic absorption spectrometry (AAS)

2. Accurate measurement of atomic beam flux by pseudo‐double‐beam atomic absorption spectroscopy for growth of thin‐film oxide superconductors

3. Real‐time control of molecular beam epitaxy by optical‐based flux monitoring

4. Accurate multiple‐quantum‐well growth using real‐time optical flux monitoring

5. Dual beam atomic absorption spectroscopy for controlling thin film deposition rates

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of mole fraction variations and scaling on total variability in InGaAs MOSFETs;Solid-State Electronics;2019-09

2. Molecular Beam Epitaxy as a Mass Production Enabling Technology for Electronic/Optoelectronic Devices;Molecular Beam Epitaxy;2018

3. Systems and Technology for Production-Scale Molecular Beam Epitaxy;Molecular Beam Epitaxy;2018

4. Development of a fluorescence based flux sensor for thin film growth and nanoparticle deposition;Review of Scientific Instruments;2016-07

5. Systems and technology for production-scale molecular beam epitaxy;Molecular Beam Epitaxy;2013

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