Effects of the low temperature grown buffer layer thickness on the growth of GaAs on Si by MBE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. Growth of Single Domain GaAs on 2-inch Si(100) Substrate by Molecular Beam Epitaxy
2. Growth and properties of GaAs/AlGaAs on nonpolar substrates using molecular beam epitaxy
3. GaAs MESFETs fabricated on Si substrates using a SrTiO3 buffer layer
4. Buffer layer effects on residual stress in InP on Si substrates
5. Growth of GaAs on Si by MOVCD
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3. Low Surface Roughness GaAs/Si Thin-Film Deposition Using Three-Step Growth Method in MBE;Materials Science Forum;2020-11
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