MOVPE homoepitaxial growth used to study the effect of aging and chemical treatment on GaAs substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. Measurement of GaAs surface oxide desorption temperatures
2. A multilayer model for GaAs oxides formed at room temperature in air as deduced from an XPS analysis
3. GaAs wafers for direct use in epitaxy
4. In situ characterisation of MOVPE by surface photoabsorption
5. Effects of storage time of epi-ready InP:Fe substrates on the quality of metalorganic vapour phase epitaxial grown InP
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