MBE growth and photoreflectance study of GaAsN alloy films grown on GaAs (001)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers
2. Gas-Source Molecular Beam Epitaxy of $\bf GaN_{\ninmbi x}As_{1-{\ninmbi x}}$ Using a N Radical as the N Source
3. Bowing parameter of the band-gap energy of GaNxAs1−x
4. MOVPE Growth and Luminescence Properties of GaAsN Alloys with Higher Nitrogen Concentrations
5. Reexamination of N composition dependence of coherently grown GaNAs band gap energy with high-resolution x-ray diffraction mapping measurements
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1. Influence of pressure and composition on electronic properties, phonon frequencies, and sound velocity for the zinc-blende GaAs1-xNx alloy;Journal of Computational Electronics;2022-08-09
2. Strain and annealing temperature effects on the optical properties of GaNAs layers grown by molecular beam epitaxy;Thin Solid Films;2022-04
3. Electronic Properties, Phonon Frequencies, and Sound Velocity for the Zinc-Blende GaAs <sub>1-x</sub>N <sub>x</sub> Under the Effect of Pressure and Composition;SSRN Electronic Journal;2021
4. Overlapping effects of the optical transitions of GaNAs thin films grown by molecular beam epitaxy;Thin Solid Films;2020-05
5. Band structure and optical constants of GaAs1-xNx;Optik;2017-02
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