MOVPE Growth and Luminescence Properties of GaAsN Alloys with Higher Nitrogen Concentrations-Reference-Cited by-同舟云学术

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MOVPE Growth and Luminescence Properties of GaAsN Alloys with Higher Nitrogen Concentrations

Published:1999-11 Issue:1 Volume:176 Page:231-235
ISSN:0031-8965
Container-title:physica status solidi (a)
language:en
Short-container-title:phys. stat. sol. (a)

Author:

Onabe K.,Aoki D.,Wu J.,Yaguchi H.,Shiraki Y.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Band Gap Energy and Band Lineup of III-V Alloy Semiconductors Incorporating Nitrogen and Boron

2. Giant and Composition-Dependent Optical Bowing Coefficient in GaAsN Alloys

3. Band gaps of GaPN and GaAsN alloys

4. Semi-empirical tight-binding calculation of the electronic structure of GaP1−xNx (x = 0.25, 0.5, 0.75) alloys

5. Incomplete Solubility in Nitride Alloys

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1. Density functional study of electronic, elastic and optical properties of GaAs1−xNx (x=0, 0.25, 0.50, 0.75, 1) alloys;Computational Condensed Matter;2022-06

2. Structural, electronic, optical and thermodynamic properties of the cubic quadratic quaternary alloys GaxIn1-xAsyN1-y. Insight from DFT computations;Materials Today Communications;2021-03

3. Optimization of a GaAsN Ternary Alloy Based Solar Cell for High Efficiency;Journal of New Technology and Materials;2018-01

4. Theoretical investigation of the heavily-doped semiconductor aspect of ultra-dilute GaAsN;Journal of the Korean Physical Society;2015-12

5. Photoreflectance study of the temperature dependence of excitonic transitions in dilute GaAsN alloys;physica status solidi (a);2014-03-19

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