Semi-empirical tight-binding calculation of the electronic structure of GaP1−xNx (x = 0.25, 0.5, 0.75) alloys
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference14 articles.
1. Metalorganic vapor phase epitaxy of GaP1−xNxalloys on GaP
2. Luminescence quenching and the formation of the GaP1−xNxalloy in GaP with increasing nitrogen content
3. Heteroepitaxial Growth of GaN1-xPx($x\lesssim0.09$) on Sapphire Substrates
4. Band gap bowing in GaP1−xNxalloys
5. Band Gap Energy and Band Lineup of III-V Alloy Semiconductors Incorporating Nitrogen and Boron
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1. Detection of Nonradiative Recombination Centers in GaPN by Combining Two‐Wavelength Excited Photoluminescence and Time‐Resolved Photoluminescence;physica status solidi (b);2021-09-06
2. Detection of Nonradiative Recombination Centers in GaPN (N:0.105%) by Below‐Gap Excitation Light;physica status solidi (b);2019-10-15
3. Growth and characterization of dilute nitride GaNxP1−x nanowires and GaNxP1−x/GaNyP1−y core/shell nanowires on Si (111) by gas source molecular beam epitaxy;Applied Physics Letters;2014-08-18
4. Photoluminescence and photoluminescence-excitation spectroscopy of InGaPN/GaP lattice-matched single quantum well structures grown by MOVPE;Journal of Crystal Growth;2007-01
5. Effects of rapid thermal annealing on optical properties of GaNxP1−xalloys grown by solid source molecular beam epitaxy;Semiconductor Science and Technology;2005-03-01
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