A comparative study of surface reconstruction of wurtzite GaN on (0001) sapphire by RF plasma-assisted molecular beam epitaxy-Reference-Cited by-同舟云学术

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A comparative study of surface reconstruction of wurtzite GaN on (0001) sapphire by RF plasma-assisted molecular beam epitaxy

Published:2001-09 Issue:1-2 Volume:231 Page:8-16
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Lee Kyeong K.,Doolittle William A.,Kim Tong-Ho,Brown April S.,May Gary S.,Stock Stuart R.,Dai Zu Rong,Wang Zhong L.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference26 articles.

1. GaN grown on hydrogen plasma cleaned 6H‐SiC substrates

2. Molecular beam epitaxy growth and properties of GaN films on GaN/SiC substrates

3. Operation of a compact electron cyclotron resonance source for the growth of gallium nitride by molecular beam epitaxy (ECR-MBE)

4. High Quality GaN Growth on (0001) Sapphire by Ion-Removed Electron Cyclotron Resonance Molecular Beam Epitaxy and First Observation of (2× 2) and (4× 4) Reflection High Energy Electron Diffraction Patterns

5. Monitoring surface stoichiometry with the (2×2) reconstruction during growth of hexagonal‐phase GaN by molecular beam epitaxy

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comprehensive Analysis of Metal Modulated Epitaxial GaN;ACS Applied Materials & Interfaces;2020-07-24

2. The fundamental surface science of wurtzite gallium nitride;Surface Science Reports;2017-09

3. Direct spontaneous growth and interfacial structural properties of inclined GaN nanopillars on r-plane sapphire;Journal of Applied Physics;2015-06-28

4. Growth and Characterization of Plasma Assisted MBE Grown GaN Films at Different Plasma Powers;Advanced Science Letters;2014-07-01

5. Epitaxial overgrowth of GaN nanocolumns;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2007

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