Direct spontaneous growth and interfacial structural properties of inclined GaN nanopillars on r-plane sapphire-Reference-Cited by-同舟云学术

Direct spontaneous growth and interfacial structural properties of inclined GaN nanopillars on r-plane sapphire

Published:2015-06-28 Issue:24 Volume:117 Page:244302
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Adikimenakis A.¹,Lotsari A.²^ORCID,Dimitrakopulos G. P.²,Kehagias Th.²,Aretouli K. E.¹,Tsagaraki K.¹,Androulidaki M.¹,Komninou Ph.²,Georgakilas A.¹

Affiliation:

1. Microelectronics Research Group (MRG), IESL, FORTH, P.O. Box 1385, GR 711 10 Heraklion Crete, Greece and Physics Department, University of Crete, GR 710 03 Heraklion Crete, Greece

2. Physics Department, Aristotle University of Thessaloniki, GR 541 24, Thessaloniki, Greece

Funder

EU (ESF) and Greek national funds - Research Funding Program THALES

Research Committee, Aristotle University of Thessaloniki (A.U.Th Research Committee)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4923034

Reference49 articles.

1. InGaN/GaN disk-in-nanowire white light emitting diodes on (001) silicon

2. Nanostructure and strain in InGaN/GaN superlattices grown in GaN nanowires

3. A review of MBE grown 0D, 1D and 2D quantum structures in a nanowire

4. Photoluminescence polarization properties of single GaN nanowires containingAlxGa1−xN/GaNquantum discs

5. Gallium nitride nanowires with a metal initiated metal-organic chemical vapor deposition (MOCVD) approach

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1. Effect of substrate nitridation and a buffer layer on the growth of a non-polar a-plane GaN epitaxial layer on an r-plane sapphire substrate by laser molecular beam epitaxy;Materials Advances;2022

2. Long-range ordered vertical III-nitride nano-cylinder arrays via plasma-assisted atomic layer deposition;Journal of Materials Chemistry C;2018