Empirical interatomic potential calculations for relative stability of Ga adatom on GaAs(100) and (n11)A surfaces
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference17 articles.
1. Magnitude, origin, and evolution of piezoelectric optical nonlinearities in strained [111]B InGaAs/GaAs quantum wells
2. Reduction in Threshold Current Density of Quantum Well Lasers Grown by Molecular Beam Epitaxy on 0.5° Misoriented (111)B Substrates
3. A light-emitting device using a lateral junction grown by molecular beam epitaxy on GaAs (311)A-oriented substrates
4. Possibility of a quasi-liquid layer of As on GaAs substrate grown by MBE as observed by enhancement of Ga desorption at high As pressure
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. An ab initio-based approach to Ga adatom migration on GaAs(n11)A–(001) non-planar surfaces;Applied Surface Science;2005-05
2. Theoretical investigations of adatom behavior on non-planar surfaces with GaAs(n1 1)A;Applied Surface Science;2004-10
3. Systematic theoretical investigations of miscibility in Si1−x−yGexCy thin films;Applied Surface Science;2003-06
4. Ab initio-based Approach to Structural Stability of GaAs Surfaces;Hyomen Kagaku;2003
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