An ab initio-based approach to Ga adatom migration on GaAs(n11)A–(001) non-planar surfaces-Reference-Cited by-同舟云学术

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An ab initio-based approach to Ga adatom migration on GaAs(n11)A–(001) non-planar surfaces

Published:2005-05 Issue:1-4 Volume:244 Page:178-181
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Ito Tomonori,Asano Koichi,Akiyama Toru,Nakamura Kohji,Shiraishi Kenji,Taguchi Akihito

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference15 articles.

1. Possibility of a quasi-liquid layer of As on GaAs substrate grown by MBE as observed by enhancement of Ga desorption at high As pressure

2. Self-limiting growth of GaAs surfaces on nonplanar substrates

3. Patterned growth on high‐index GaAs (n11) substrates: Application to sidewall quantum wires

4. Substrate surface atomic structure influence on the growth of InAlAs quantum dots

5. Novel semiconductor nanostructures by functional self-organized epitaxy

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nucleation, transition, and maturing of the self-assembled Au droplets on various type-A GaAs substrates;Journal of Applied Physics;2014-08-28

2. Formation Mechanism of AlGaAs/GaAs Stripe Structure Made of (11n)A Facets in Selective Molecular-Beam Epitaxy;Japanese Journal of Applied Physics;2009-07-21

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