Novel semiconductor nanostructures by functional self-organized epitaxy
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference14 articles.
1. W. Braun, V.M. Kaganer, A. Trampert, H.-P. Schönherr, Q. Gong, R. Nötzel, L. Däweritz, K.H. Ploog, J. Crystal Growth.
2. Growth of GaAs‐Ga1−xAlxAs over preferentially etched channels by molecular beam epitaxy: A technique for two‐dimensional thin‐film definition
3. Selectivity of growth on patterned GaAs (311)A substrates
4. Patterned growth on high‐index GaAs (n11) substrates: Application to sidewall quantum wires
5. Patterned growth on GaAs (311)A substrates: Engineering of growth selectivity for lateral semiconductor nanostructures
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1. An Ab Initio-based Approach to the Behavior of Ga Atoms on the GaAs Surfaces;Hyomen Kagaku;2008
2. An ab initio-based approach to Ga adatom migration on GaAs(n11)A–(001) non-planar surfaces;Applied Surface Science;2005-05
3. Theoretical investigations of adatom behavior on non-planar surfaces with GaAs(n1 1)A;Applied Surface Science;2004-10
4. Using self-assembly for the fabrication of nano-scale electronic and photonic devices;IEEE Transactions on Advanced Packaging;2003-08
5. AlGaInN-based ultraviolet light-emitting diodes grown on Si(111);Applied Physics Letters;2002-05-20
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