Local epitaxy and lateral epitaxial overgrowth of SiC
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. 2000 V 6H‐SiCp‐njunction diodes grown by chemical vapor deposition
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1. Study on the Surface Structure of N-Doped 4H-SiC Homoepitaxial Layer Dependence on the Growth Temperature and C/Si Ratio Deposited by CVD;Crystals;2023-01-21
2. Epitaxial Growth of Silicon Carbide by Chemical Vapor Deposition;Springer Handbook of Crystal Growth;2010
3. Local-Loading Effect in Low-Temperature Selective Epitaxial Growth of 4H-SiC by Halo-Carbon Method;Materials Science Forum;2008-09
4. Selective Epitaxial Growth of 4H-SiC with SiO2 Mask by Low-Temperature Halo-Carbon Homoepitaxial Method;Materials Science Forum;2007-09
5. Improvement of 4H–SiC selective epitaxial growth by VLS mechanism using Al and Ge-based melts;Diamond and Related Materials;2007-01
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