Quality-enhanced GaAs layers grown on substrates by metalorganic chemical vapor deposition
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. Stable cw operation at room temperature of a 1.5‐μm wavelength multiple quantum well laser on a Si substrate
2. GaAs/AlAs/Si heterostructures for blocking dark current injection in impurity‐band‐conduction photodetectors
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4. Improved characteristics of GaAs metal‐semiconductor field‐effect transistors on Si substrates back‐coated with SiO2by metalorganic chemical vapor deposition
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1. Global transition path search for dislocation formation in Ge on Si(001);Computer Physics Communications;2016-08
2. Minimum energy path for the nucleation of misfit dislocations in Ge/Si(0 0 1) heteroepitaxy;Modelling and Simulation in Materials Science and Engineering;2016-02-23
3. High-speed GaAs metal gate semiconductor field effect transistor structure grown on a composite Ge∕GexSi1−x∕Si substrate;Journal of Applied Physics;2007-04-15
4. Effect of Ga predeposition layer on the growth of GaAs on vicinal Ge(001);Journal of Crystal Growth;1999-05
5. Analysis of GaAs properties under biaxial tensile stress;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1998-07
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