Improved characteristics of GaAs metal‐semiconductor field‐effect transistors on Si substrates back‐coated with SiO2by metalorganic chemical vapor deposition-Reference-Cited by-同舟云学术

Improved characteristics of GaAs metal‐semiconductor field‐effect transistors on Si substrates back‐coated with SiO2by metalorganic chemical vapor deposition

Published:1991-03-25 Issue:12 Volume:58 Page:1265-1267
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Egawa T.,Nozaki S.,Soga T.,Jimbo T.,Umeno M.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.104331

Reference7 articles.

1. Low‐threshold continuous‐wave room‐temperature operation of AlxGa1−xAs/GaAs single quantum well lasers grown by metalorganic chemical vapor deposition on Si substrates with SiO2back coating

2. Room-Temperature CW Operation of AlGaAs/GaAs SQW Lasers on Si Substrates by MOCVD Using AlGaAs/AlGaP Intermediate Layers

3. Fabrication of GaAs MESFET Ring Oscillator on MOCVD Grown GaAs/Si(100) Substrate

4. Characteristics of all-OMCVD Grown GaAs MESFETS on Si Substrates

5. GaAs E/D MESFET 1-kbit static RAM fabricated on silicon substrate

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. GaN MESFETs on (111) Si substrate grown by MOCVD;Electronics Letters;2000

2. Quality-enhanced GaAs layers grown on substrates by metalorganic chemical vapor deposition;Journal of Crystal Growth;1997-08

3. Performance of InGaAs metal-semiconductor-metal photodetectors on Si;IEEE Photonics Technology Letters;1996-05

4. The distribution of charge concentration in InP/Si;Journal of Applied Physics;1995-07

5. Influences of Dark Line Defects on Characteristics of AlGaAs/GaAs Quantum Well Lasers Grown on Si Substrates;Japanese Journal of Applied Physics;1995-06-15