Microstructure analysis of ohmic contacts on MBE grown n-GaSb and investigation of sub-micron contacts
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference10 articles.
1. Improved charge control and frequency performance in InAs/AlSb-based heterostructure field-effect transistors
2. Long wavelength InAs/InGaSb infrared detectors: Optimization of carrier lifetimes
3. Nonalloyed ohmic contacts ton‐GaAs by solid‐phase epitaxy of Ge
4. Ohmic contact formation mechanism of the Au/Ge/Pd/n-GaAs system formed below 200 °C
5. Evidence for the formation of n+-GaAs layer in Pd/Ge ohmic contact to n-type GaAs
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1. Interfacial characterization and electrical properties of Ni–GaSb contacts;Applied Physics Letters;2014-10-06
2. Low resistance palladium/molybdenum based ohmic contacts to n-GaSb grown on GaAs;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2014-07
3. Electrical and microstructure analysis of nickel-based low-resistance ohmic contacts to n-GaSb;APL Materials;2013-12
4. Ohmic contacts to n-type GaSb grown on GaAs by the interfacial misfit dislocation technique;SPIE Proceedings;2013-03-25
5. Single-Mode Monolithic GaSb Vertical-Cavity Surface-Emitting Laser;Optics Express;2012-06-26
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