Epitaxial growth and characterization of GaN Films on (001) GaAs substrates by radio-frequency molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
1. High-Power GaN P-N Junction Blue-Light-Emitting Diodes
2. High‐responsivity photoconductive ultraviolet sensors based on insulating single‐crystal GaN epilayers
3. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
4. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
5. Structure Control of GaN Films Grown on (001) GaAs Substrates by GaAs Surface Pretreatments
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Epitaxial growth and characterization of cubic GaN on BP/Si(100) substrates;MRS Proceedings;2011
2. Growth of InAs on micro- and nano-scale patterned GaAs(001) substrates by molecular beam epitaxy;Nanotechnology;2006-10-03
3. Growth of cubic GaN on Si (100) Substrates;MRS Proceedings;2006
4. Hole mobility in zincblende c–GaN;Journal of Applied Physics;2004-05
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