The structure and current–voltage characteristics of multi-sheet InGaN quantum dots grown by a new multi-step method-Reference-Cited by-同舟云学术

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The structure and current–voltage characteristics of multi-sheet InGaN quantum dots grown by a new multi-step method

Published:2002-08 Issue:1 Volume:243 Page:19-24
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Chen Zhen,Lu Da-Cheng,Han Peide,Liu Xianglin,Wang Xiaohui,Li Yufeng,Yuan Hairong,Lu Yuan,Bing Lida,Zhu Qinsheng,Wang Zhanguo,Wang Xiufeng,Yan Li

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference24 articles.

1. Quantum wires, quantum boxes and related structures: Physics, device potentials and structural requirements

2. Scaling laws and minimum threshold currents for quantum‐confined semiconductor lasers

3. Spatial quantization in GaAs–AlGaAs multiple quantum dots

4. Semiconductor quantum-wire structures directly grown on high-index surfaces

5. Application of selective epitaxy to fabrication of nanometer scale wire and dot structures

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Size-induced metal-to-semiconductor transition and room temperature sequential resonant tunneling in La0.5Sr0.5CoO3−δ quantum dots embedded in La0.5Sr0.5CoO3−δ nanotubes;Applied Physics Letters;2009-08-24

2. Room-Temperature Observation of Electron Resonant Tunneling Through InAs∕AlAs Quantum Dots;Electrochemical and Solid-State Letters;2006

3. Effects of different modified underlayer surfaces on growth and optical properties of InGaN quantum dots;Vacuum;2005-02

4. Structural and optical properties of 3D growth multilayer InGaN/GaN quantum dots by metalorganic chemical vapor deposition;Journal of Crystal Growth;2004-06

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