InGaAsP/InGaP superlattices by conventional MBE with molten metal solution phosphorus source-Reference-Cited by-同舟云学术

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InGaAsP/InGaP superlattices by conventional MBE with molten metal solution phosphorus source

Published:2003-01 Issue:1-2 Volume:247 Page:23-27
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Putyato M.A,Preobrazhenskii V.V,Semyagin B.R,Bolkhovityanov Yu.B,Gilinsky A.M,Gutakousky A.K,Revenko M.A,Pchelyakov O.P,Feklin D.F

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference15 articles.

1. M. Razeghi, MOCVD Challenge, Vol. 2, IOP Press, Bristol, UK, 1995.

2. GSMBE grown In0.49Ga0.51P/(In)GaAs/GaAs high hole mobility transistor structures

3. Reproducibility studies of lattice matched GaInAsP on (100) InP grown by molecular beam epitaxy using solid phosphorus

4. Evaluation of the performance and operating characteristics of a solid phosphorus source valved cracking cell for molecular beam epitaxy growth of III–V compounds

5. A GaP decomposition source for producing a dimer phosphorus molecular beam free of gallium and tetramer phosphorus

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3. Evaporated Se x Te 1‐ x Thin Films with Tunable Bandgaps for Short‐Wave Infrared Photodetectors;Advanced Materials;2020-08-09

4. Molecular beam epitaxy of III-P x As1 − x solid solutions: Mechanism of composition formation in the sublattice of a group V element;Semiconductors;2015-02

5. Saturable absorbers based on semiconductor A 3 B 5 nanostructures;SPIE Proceedings;2010-04-30

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