Single Photon Detectors Based on InP/InGaAs/InP Avalanche Photodiodes-Reference-Cited by-同舟云学术

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Single Photon Detectors Based on InP/InGaAs/InP Avalanche Photodiodes

Published:2021-09 Issue:5 Volume:57 Page:485-493
ISSN:8756-6990
Container-title:Optoelectronics, Instrumentation and Data Processing
language:en
Short-container-title:Optoelectron.Instrument.Proc.

Author:

Preobrazhenskii V. V.,Chistokhin I. B.,Putyato M. A.,Valisheva N. A.,Emelyanov E. A.,Petrushkov M. O.,Pleshkov A. S.,Neizvestny I. G.,Ryabtsev I. I.

Publisher

Allerton Press

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Instrumentation

Link

https://link.springer.com/content/pdf/10.3103/S8756699021050125.pdf

Reference19 articles.

1. W. K. Wooters and W. H. Zurek, ‘‘A single quantum cannot be cloned,’’ Nature. 299, 802–803 (1982). https://doi.org/10.1038/299802a0

2. N. Gisin, G. Ribordy, W. Tittel, and H. Zbinden, ‘‘Quantum cryptography,’’ Rev. Mod. Phys. 74, 145–175 (2002). https://doi.org/10.1103/RevModPhys.74.145

3. I. I. Ryabtsev, I. I. Beterov, D. B. Tretyakov, V. M. Entin, V. L. Kurochkin, A. V. Zverev, and I. G. Neizvestny, ‘‘Experimental quantum information with single atoms and photons,’’ Herald Russ. Acad. Sci. 83, 336–344 (2013). https://doi.org/10.1134/S1019331613040047

4. I. I. Ryabtsev, D. B. Tretyakov, A. V. Kolyako, A. S. Pleshkov, V. M. Entin, I. G. Neizvestny, A. V. Latyshev, and A. L. Aseev, ‘‘Element base of quantum informatics II: Qunatum communications with single photons, Russ. Microelectron. 46, 121–130 (2007). https://doi.org/10.1134/S1063739717020093

5. ID Quantique (IDQ), 2021. http://www.idquantique.com. Cited August 4, 2021.

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Zn doping of InAlAs and InP epitaxial layers from a planar Zn₃P₂ source;Journal of Optical Technology;2024-02-01

2. Modeling InGaAs/InAlAs Spads as a Part of Single-Photon Detectors to Predict Their Electrical Parameters;Journal of Russian Laser Research;2023-03

3. Evaluation of the Operational Parameters of Single-Photon Detectors in Quantum Key Distribution Devices;Optoelectronics, Instrumentation and Data Processing;2023-02

4. Surface morphology of InGaAs and InP layers after local Zn diffusion from the vapor phase in the MOCVD reactor;MATER PHYS MECH;2023

5. Peculiarities of the two-stage Zn diffusion profile formation from vapor phase into InGaAs/InP heterostructure for avalanche photodiode fabrication;MATER PHYS MECH;2023

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