Fabrication of silicon-on-AlN novel structure and its residual strain characterization
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
1. Reduction of self-heating effect on SOIM devices
2. Lateral insulated gate bipolar transistor (LIGBT) structure based on partial isolation SOI technology
3. High temperature growth of AlN by plasma-enhanced molecular beam epitaxy
4. Applications of Aluminium Nitride Films Deposited by Reactive Sputtering to Silicon-On-Insulator Materials
5. Aluminium nitride thin films prepared by ion beam assisted deposition method
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