Molecular-beam epitaxy of InAs on GaAs substrates with hole arrays patterned by focused ion beam
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
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4. K. Nishi, R. Mirin, D. Leonard, G. Medeiros-Ribeiro, P.M. Petroff, A.C. Gossard, Proceeding of the Seventh International Conference Indium Phosphide and Related Materials, Sapporo, 1995, p. 759.
5. Optical investigation of the self-organized growth of InAs/GaAs quantum boxes
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1. Formation of self-assembled Ga-rich droplet chains on GaAs (100) patterned by focused ion beam;Applied Physics Letters;2016-09-19
2. Impact of the non-planar morphology of pre-patterned substrates on the structural and electronic properties of embedded site-controlled InAs quantum dots;Journal of Applied Physics;2013-11-07
3. Study of molecular-beam epitaxy growth on patterned GaAs (100) substrates by masked indium ion implantation;Journal of Crystal Growth;2011-03
4. The rapid prototyping of textured amorphous surfaces for the graphoepitaxial deposition of CdTe films using focused ion beam lithography;Applied Physics A;2011-01-13
5. Hybrid Photovoltaic Device Based on Nanoporous GaAs by Using Ag Metal-Assisted Nanoscale Lithography;Journal of The Electrochemical Society;2011
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