Study of molecular-beam epitaxy growth on patterned GaAs (100) substrates by masked indium ion implantation-Reference-Cited by-同舟云学术

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Study of molecular-beam epitaxy growth on patterned GaAs (100) substrates by masked indium ion implantation

Published:2011-03 Issue:1 Volume:318 Page:572-575
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Zhou Huiying,Qu Shengchun,Jin Peng,Xu Bo,Ye Xiaoling,Liu Junpeng,Wang Zhanguo

Funder

National Basic Research Program of China

Hi-Tech Research and Development Program of China

Scientific Research Fund of Central South University of Forestry and Technology

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference15 articles.

1. Surface ordering of (In,Ga)As quantum dots controlled by GaAs substrate indexes

2. Synthesis of germanium nanodots on silicon using an anodic alumina membrane mask

3. Morphology Response to Strain Field Interferences in Stacks of Highly Ordered Quantum Dot Arrays

4. Two-dimensional ordering of InGaAs quantum dots formed on an artificial nano-hole array with 100 nm periodicity

5. Two-dimensional periodic positioning of self-assembled Ge islands on prepatterned Si (001) substrates

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