Effect of the axial temperature gradient on the formation of grown-in defect regions in Czochralski silicon crystals; reversion of the defect regions between the inside and outside of the Ring-OSF-Reference-Cited by-同舟云学术

Effect of the axial temperature gradient on the formation of grown-in defect regions in Czochralski silicon crystals; reversion of the defect regions between the inside and outside of the Ring-OSF

Published:2002-04 Issue: Volume:237-239 Page:1651-1656
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Okui Masahiko,Nishimoto Manabu

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference13 articles.

1. Formation Process of Stacking Faults with Ringlike Distribution in CZ-Si Wafers

2. Transmission Electron Microscope Observation of “IR Scattering Defects” in As-Grown Czochralski Si Crystals

3. Octahedral-Structured Gigantic Precipitates as the Origin of Gate-Oxide Defects in Metal-Oxide-Semiconductor Large-Scale-Integrated Circuits

4. The Direct Observation of Grown‐in Laser Scattering Tomography Defects in Czochralski Silicon

5. Dependence of the Grown-in Defect Distribution on Growth Rates in Czochralski Silicon

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