Mechanics of Defects in Dislocation-Free Silicon Single Crystals

Author:

Verezub N. A.,Prostomolotov A.I.

Publisher

Allerton Press

Subject

General Physics and Astronomy,Mechanics of Materials

Reference45 articles.

1. M. G. Mil’vidskii and V. B. Osvenskii, Structural Defects in Single-Crystal Semiconductors (Metallurgiya, Moscow, 1984) [in Russian].

2. V. V. Voronkov, “The mechanism of swirl defects formation in silicon,” J. Crystal Growth. 59, 625–643 (1982). https://doi.org/10.1016/0022-0248(82)90386-4

3. T. Mori, Z. Wang, and R. Brown, “Transient simulation of grown-in defect dynamics in Czochralski crystal growth of silicon,” Electrochem. Soc. Proc. 17, 118–127 (2000).

4. V. V. Voronkov and R. Falster, “Grown-in microdefects, residual vacancies and oxygen precipitation bands in Czochralski silicon,” J. Crystal Growth. 204 (4), 462–474 (1999). https://doi.org/10.1016/S0022-0248(99)00202-X

5. V. M. Babich, N. I. Bletskan, and E. F. Wenger, Oxygen in Silicon Single Crystals (Interpres, Kiev, 1997) [in Russian].

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