Dependence on In content of InxGa1−xAs quantum dots grown along GaAs multiatomic steps by MOVPE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
1. Multidimensional quantum well laser and temperature dependence of its threshold current
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1. Size anisotropy inhomogeneity effects in state-of-the-art quantum dot lasers;Applied Physics Letters;2018-07-02
2. On the electronic states in lens-shaped quantum dots;physica status solidi (b);2017-07-12
3. Effect of GaAs multi-atomic steps thickness on the structural and optical properties of self-assembled In0.5Ga0.5As quantum dots;AIP Conference Proceedings;2016
4. Effect of growth temperature and GaAs substrate misorientation on the morphology of InAsBi nanoislands grown by metalorganic vapor phase epitaxy;Applied Surface Science;2014-02
5. The impact of AsH3 overflow time and indium composition on the formation of self-assembled InxGa1 − xAs quantum dots studied by atomic force microscopy;Journal of Theoretical and Applied Physics;2013
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