Molecular-beam epitaxy of InAs on anodized GaAs substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
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4. K. Nishi, R. Mirin, D. Leonard, G. Medeiros-Ribeiro, P.M. Petroff, A.C. Gossard, in: Proceedings of the Seventh International Conference on Indium Phosphide and Related Materials, Sapporo, 1995, p. 759.
5. Optical investigation of the self-organized growth of InAs/GaAs quantum boxes
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Molecular-beam epitaxy of InAs on GaAs substrates with hole arrays patterned by focused ion beam;Journal of Crystal Growth;2002-04
2. Effects of regularity of honeycomb hollows formed by the anodization of GaAs substrates on the molecular-beam epitaxial growth of InAs dots;Journal of Crystal Growth;2001-07
3. Magnetic-Field-Assisted Anodization of GaAs Substrates;Electrochemical and Solid-State Letters;2001
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