InAlAs buffer layers grown lattice mismatched on GaAs with inverse steps
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. Strain relaxation of compositionally graded InxGa1−xAs buffer layers for modulation‐doped In0.3Ga0.7As/In0.29Al0.71As heterostructures
2. Continuously graded buffers for structures grown on GaAs
3. Lattice tilt and dislocations in compositionally step-graded buffer layers for mismatched InGaAs/GaAs heterointerfaces
4. Material properties of compositional graded InxGa1−xAs and InxAl1−xAs epilayers grown on GaAs substrates
5. X‐ray reciprocal‐space mapping of strain relaxation and tilting in linearly graded InAlAs buffers
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