Modifications of the gallium arsenide crystal surface during annealing
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference14 articles.
1. Undoped semi-insulating LEC GaAs: a model and a mechanism
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3. A. Mader, J.D. Meyer and K. Bethge, Nucl. Instr. and Meth., to be published.
4. A deep level transient spectroscopy analysis of electron and hole traps in bulk‐grown GaAs
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1. Nitrogen depth distribution, interface and structure analysis of SiNx layers produced by low-energy ion implantation;Mikrochimica Acta;1997-03
2. Computer simulation of channeling in Si and GaAs crystals;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1995-05
3. Chemical bonding and interface analysis of ultrathin silicon-nitride layers produced by ion implantation and Electron Beam Rapid Thermal Annealing (EB-RTA);Applied Physics A Solids and Surfaces;1994-10
4. Investigation of the electronic energy loss of light ions for materials analysis;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1994-05
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