Chemical bonding and interface analysis of ultrathin silicon-nitride layers produced by ion implantation and Electron Beam Rapid Thermal Annealing (EB-RTA)-Reference-Cited by-同舟云学术

Chemical bonding and interface analysis of ultrathin silicon-nitride layers produced by ion implantation and Electron Beam Rapid Thermal Annealing (EB-RTA)

Published:1994-10 Issue:4 Volume:59 Page:435-439
ISSN:0721-7250
Container-title:Applied Physics A Solids and Surfaces
language:en
Short-container-title:Appl. Phys. A

Author:

Markwitz A.,Baumann H.,Krimmel E. F.,Michelmann R. W.,Maurer C.,Paloura E. C.,Knop A.,Bethge K.

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry,Physics and Astronomy (miscellaneous),General Engineering,General Materials Science

Link

http://link.springer.com/content/pdf/10.1007/BF00331725.pdf

Reference20 articles.

1. A. Pebler (ed.): Silicon Nitride in Microelectronics, Gmelin Handbook of Inorganic and Organometallic Chemistry, Si Sect. 5, Part c (Springer, Berlin, Heidelberg 1991)

2. J. Mort, E. Jansen: Plasma Deposited Thin Films (CRC, Boca Raton 1986)

3. A. Markwitz, H. Baumann, S. Logothetidis, R.W. Michelmann, P. Misaelides, J. Petalas, W. Wesch, E.F. Krimmel, K. Bethge: Proc. 13. General Conf. EPS, Regensburg (1993)

4. A. Markwitz, H. Baumann, P. Misaelides, E.F. Krimmel, K. Bethge: Fresenius J. Anal. Chem. 346, 177 (1993)

5. Inorg. Chem. Conc.;B.T. Lee,1986

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