Athermal nature of impact exerted by ultraviolet radiation on the accumulation of radiation defects during ion implantation into silicon-Reference-Cited by-同舟云学术

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Athermal nature of impact exerted by ultraviolet radiation on the accumulation of radiation defects during ion implantation into silicon

Published:1992-06 Issue:2-3 Volume:69 Page:268-270
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Danilin A.B.,Erokhin Yu.N.,Mordkovich V.N.,Hatzopoulos N.,Hemment P.L.F.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference6 articles.

1. Radiation Damage During Ion Implantation;Vook,1972

2. Properties of Silicon,1988

3. ESR AND OPTICAL ABSORPTION STUDIES OF ION‐IMPLANTED SILICON

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The influence of target temperature and photon assistance on the radiation defect formation in low-fluence ion-implanted silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2001-04

2. Distinctive features of the creation of radiation-induced defects in p-Si by photonassisted low-dose ion implantation;Semiconductors;1999-08

3. Effect of in situ photoexcitation of n-type Si as a result of ion implantation at low doses on the formation of radiation defects;Semiconductors;1999-05

4. On light suppressed divacancy formation at photon assisted ion implantation of silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1997-10

5. Atomic migration and related changes in defect concentration and structure due to electronic subsystem excitations in semiconductors;Uspekhi Fizicheskih Nauk;1997

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