Atomic migration and related changes in defect concentration and structure due to electronic subsystem excitations in semiconductors-Reference-Cited by-同舟云学术

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Atomic migration and related changes in defect concentration and structure due to electronic subsystem excitations in semiconductors

Published:1997 Issue:4 Volume:167 Page:407
ISSN:0042-1294
Container-title:Uspekhi Fizicheskih Nauk
language:ru
Short-container-title:Usp. Fiz. Nauk

Author:

Vavilov V.S.

Publisher

Uspekhi Fizicheskikh Nauk (UFN) Journal

Subject

General Physics and Astronomy

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Модель дефектообразования в Cdx Hg1-xTe под действием мягкого рентгеновского излучении;Тезисы докладов Российской конференции и школы молодых ученых по актуальным проблемам полупроводниковой фотоэлектроники «ФОТОНИКА-2019»;2019-05-24

2. Secondary-ion mass spectrometry of photoconducting targets;Technical Physics;2007-11

3. Spontaneous synthesis of diamond crystals from graphite irradiated by γ rays;Crystallography Reports;2006-01

4. Fundamental processes of radiation energy storage in KDP (KH2PO4) and ADP (NH4H2PO4) crystals;Radiation Measurements;2001-10

5. Analysis of the active region of overheating temperature in green LEDs based on Group III nitrides;Technical Physics;2001-04

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