Channeling study of laser-induced damage in GaP-Reference-Cited by-同舟云学术

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Channeling study of laser-induced damage in GaP

Published:1986-03 Issue:1-3 Volume:13 Page:503-505
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Chechenin N.G.,Burdel K.K.,Zenkov Yu.V.,Kashkarov P.K.,Tulinov A.F.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference13 articles.

1. Semiconductor Optoelectronics;Moss,1973

2. A semiempirical method of applying the dechanneling correction in the extraction of disorder distribution

3. On “measurements” of radiation damage by backscattering experiments

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Laser-induced defect formation in semiconductors;Applied Physics A Solids and Surfaces;1992-08

2. Channeling study of the orientational dependence of laser-induced damage in GaAs and GaP;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1988-06

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