A semiempirical method of applying the dechanneling correction in the extraction of disorder distribution-Reference-Cited by-同舟云学术

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A semiempirical method of applying the dechanneling correction in the extraction of disorder distribution

Published:1977-01 Issue:4 Volume:34 Page:157-161
ISSN:0033-7579
Container-title:Radiation Effects
language:en
Short-container-title:Radiation Effects

Author:

Walker R. S.,Thompson D. A.,Poehlman S. W.

Publisher

Informa UK Limited

Subject

General Engineering

Link

http://www.tandfonline.com/doi/pdf/10.1080/00337577708233143

Reference13 articles.

1. Defect studies in crystals by means of channeling

2. Analysis of disorder distributions in boron implanted silicon

3. Eisen, F. H., Welch, B., Westmoreland, J. E. and Mayer, J. W. 1970.Atomic Collision Phenomena in SolidsEdited by: Palmer, D. W. and Thompson, M. W. 111Amsterdam: Townsend, North Holland.

4. Depth Profiles of the Lattice Disorder Resulting from Ion Bombardment of Silicon Single Crystals

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The lattice location of helium implanted in α-SiC;Journal of Nuclear Materials;1994-06

2. Ion-beam damage to quartz crystals;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1990-02

3. Channeling;Ion Beans for Materials Analysis;1989

4. Channeling study of laser-induced damage in GaP;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1986-03

5. Measurement of damage profile in crystals by channeling technique;Radiation Effects;1984-01

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