Channeling study of the orientational dependence of laser-induced damage in GaAs and GaP-Reference-Cited by-同舟云学术

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Channeling study of the orientational dependence of laser-induced damage in GaAs and GaP

Published:1988-06 Issue:1-4 Volume:33 Page:844-847
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Tulinov A.F.,Bourdelle K.K.,Chechenin N.G.,Kashkarov P.K.,Efimova A.I.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference11 articles.

1. Cohesive Properties of Semiconductors under Laser Irradiation,1983

2. Pulsed Laser Processing of Semicond,1984

3. Channeling study of laser-induced damage in GaP

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Vacancy-initiated laser sputtering from semiconductor surfaces;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1993-07

2. Laser Induced Modification of n-GaAs below the Classical Melting Threshold;physica status solidi (a);1990-10-16

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