Sub-100 mn p+/n junction formation using plasma immersion ion implantation
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference11 articles.
1. Formation of ultrashallowp+‐njunctions by low‐energy boron implantation using a modified ion implanter
2. Sub‐100‐nmp+‐nshallow junctions fabricated by group III dual ion implantation and rapid thermal annealing
3. Plasma source ion‐implantation technique for surface modification of materials
4. Plasma immersion ion implantation using plasmas generated by radio frequency techniques
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