Model investigations of the oxidation of silicon by high dose implantation-Reference-Cited by-同舟云学术

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Model investigations of the oxidation of silicon by high dose implantation

Published:1986-04 Issue:1-6 Volume:15 Page:748-751
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Jäger H.U.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference18 articles.

1. C.M.O.S. devices fabricated on buried SiO2 layers formed by oxygen implantation into silicon

2. Synthesis of silicon dioxide by ion implantation

3. A model for the evolution of implanted oxygen profiles in silicon

4. Oxygen distributions in synthesized SiO2 layers formed by high dose O+ implantation into silicon

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Materials Processing;Ion Beams in Materials Processing and Analysis;2012

2. Cathodoluminescence of Ge+, Si+, and O+ implanted SiO2 layers and the role of mobile oxygen in defect transformations;Journal of Non-Crystalline Solids;2002-05

3. Modeling of bombardment induced oxidation of silicon;Journal of Applied Physics;2001-03

4. The three-dimensional implantation distribution of 200 keV Hg+ions in quartz;Radiation Effects and Defects in Solids;1997-07

5. Sputtering Yield Changes, Surface Movement and Apparent Profile Shifts in SIMS Depth Analyses of Silicon Using Oxygen Primary Ions;Surface and Interface Analysis;1996-06

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