Modeling of bombardment induced oxidation of silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1344581
Reference32 articles.
1. Sputtering Yield Changes, Surface Movement and Apparent Profile Shifts in SIMS Depth Analyses of Silicon Using Oxygen Primary Ions
2. Influence of the depth calibration procedure on the apparent shift of impurity depth profiles measured under conditions of long-term changes in erosion rate
3. Transient phenomena and impurity relocation in SIMS depth profiling using oxygen bombardment: pursuing the physics to interpret the data
4. Analysis of thin‐film silicon‐on‐insulator structures formed by low‐energy oxygen ion implantation
5. Role of ion energy in ion beam oxidation of semiconductors: Experimental study and model
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