Sheet resistivity of silicon wafers implanted with a high current machine-Reference-Cited by-同舟云学术

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Sheet resistivity of silicon wafers implanted with a high current machine

Published:1985-01 Issue:1-2 Volume:6 Page:412-417
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Steeples K.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference6 articles.

1. ONSCAN, Physics international corp., San Leandro, CA, USA.

2. M. Farley, EATON Corp: Pat Pending.

3. 4th Int. Conf. Equipment and Techniques;Smith,1982

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ion implant standard;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1991-04

2. Electron probe X-ray microanalysis as a non-destructive method for the quantitative determination of ion-implanted impurities in silicon;Fresenius' Journal of Analytical Chemistry;1991

3. An Industry‐Wide Evaluation of Ion Implant Dosing Accuracy;Journal of The Electrochemical Society;1988-07-01

4. Ion Implantation Diagnostics and Process Control;Ion Implantation Science and Technology;1988

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