Quantification of carbon in Si1−x−yGexCy with uniform profiles
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference17 articles.
1. Growth and strain compensation effects in the ternary Si1−x−yGexCyalloy system
2. Chemical vapor deposition of heteroepitaxial Si1−x−yGexCy films on (100)Si substrates
3. Precipitation and relaxation in strained Si1−yCy/Si heterostructures
4. S. Furukawa, H. Etoh, A. Ishizaka and T. Shimada, United States Patent # 4885614 (1989).
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