Stability of SIMOX and SIMNI structures at high temperature in hydrogen-Reference-Cited by-同舟云学术

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Stability of SIMOX and SIMNI structures at high temperature in hydrogen

Published:1991-07 Issue: Volume:59-60 Page:685-689
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Li Jinhua,Lin Chenglu,Lin Zhixing,Zhou Zuyao,Zou Shichang

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference5 articles.

1. Fabrication of buried layers of SiO2 and Si3N4 a using ion beam synthesis

2. Proc. 2nd Int. Conf. on Solid State and Integrated Circuit Technology;Lin,1989

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1. Strain relaxation of SiGe in a Si/SiGe/Si heterostructure under proton irradiation;Applied Physics Letters;2009-06-29

2. Hydrogen annealing effects on epitaxy of SOI wafer;Materials Letters;2005-02

3. Ion beam mixing in strained layer structures;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1996-09

4. A comparatively low-quality silicon material improved for solar cell fabrication;Solar Energy Materials and Solar Cells;1993-01

5. Copper deposition and thermal stability issues in copper-based metallization for ULSI technology;Materials Science Reports;1992-12

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