Strain relaxation of SiGe in a Si/SiGe/Si heterostructure under proton irradiation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3167814
Reference24 articles.
1. Hydrogen gettering and strain-induced platelet nucleation in tensilely strained Si0.4Ge0.6/Ge for layer exfoliation applications
2. Relaxed graded SiGe donor substrates incorporating hydrogen-gettering and buried etch stop layers for strained silicon layer transfer applications
3. Self-assembling of nanovoids in 800-keV Ge-implanted Si/SiGe multilayered structures
4. Localization of He induced nanovoids in buried Si1−xGex thin films
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1. The collision frequency model of the solid state plasma for Si/Si 1−x Ge x /Si SPiN device;Solid State Communications;2017-01
2. Defect structure and strain reduction of 3C-SiC/Si layers obtained with the use of a buffer layer and methyltrichlorosilane addition;CrystEngComm;2016
3. Effects of proton irradiation on Si-nanocrystal/SiO2 multilayers: study of photoluminescence and first-principles calculations;Journal of Materials Chemistry C;2015
4. High-energy neutrons effect on strained and non-strained SOI MuGFETs and planar MOSFETs;Microelectronics Reliability;2012-01
5. Deliberate versus intrinsic disorder in photonic crystal nanocavities investigated by resonant light scattering;Physical Review B;2011-07-12
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