Spatial localization of the buried ion-beam synthesized layer of silicon dioxide inclusions in silicon
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference8 articles.
1. Ion-beam synthesis of new phases in silicon interpreted as the decay of a supersaturated solid solution
2. The role of implantation temperature and dose in the control of the microstructure of SIMOX structures
3. Precipitation and redistribution of oxygen in Czochralski‐grown silicon
4. Multistep Repeated Annealing for CZ‐Silicon Wafers: Oxygen and Induced Defect Behavior
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. RADIATION DEFECT ENGINEERING;International Journal of High Speed Electronics and Systems;2005-03
2. Observation of Vacancy-Oxygen Complexes in Silicon Implanted with Substoichiometric Doses of Oxygen Ions;MRS Proceedings;1995
3. Surface-Oriented Oxygen Mass Transport During Implantation;MRS Proceedings;1995
4. Experimental study and modeling of structure formation in buried layers at ion beam synthesis;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1994-05
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