Author:
Belogorokhov A. I.,Charnyi L. A.,Danilin A. B.,Nemirovski A. W.
Abstract
AbstractCz-grown p-Si(111) specimens were implanted with O+ ions at an energy of 150 keV and doses of 0.25, 0.5, and 1.0 (·1017) cm−2. The implantation temperatures used were 350 and 650 °C. After the implantation, some of the specimens were annealed at 1000 °C for 1 h in a nitrogen atmosphere. IR data indicated the presence of vacancy-oxygen complexes both before and after annealing, irrespective of implantation temperature. Double-crystal X-ray rocking curves also showed that vacancy-type defects are present.
Publisher
Springer Science and Business Media LLC
Reference17 articles.
1. A model for the evolution of implanted oxygen profiles in silicon
2. 1. Sumino K. , 2nd Inter. Autumn Meeting Proc. Gettering and Defect Engineering in Semiconductor Technology (GADEST 87), Garzau, Germany, 1987. Akad. Weisenschaften DDR, Frankfurt (Oder), 218 (1987).
3. Interactions of Implanted Carbon with Oxygen and Nitrogen in Silicon