A high-resolution beam profile measuring system for high-current ion implanters-Reference-Cited by-同舟云学术

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A high-resolution beam profile measuring system for high-current ion implanters

Published:1991-04 Issue:1-4 Volume:55 Page:90-93
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Fujishita N.,Noguchi K.,Sasaki S.,Yamamoto H.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference3 articles.

1. Control of surface charging during high current ion implantation

2. Analysis techniques of charging damage studied on three different high-current ion implanters

3. Wafer chargeup study on the PR-80 high current ion implantation machine

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-resolution ion beam profiler for ion implanters;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1995-05

2. Ion beam Profile and Emittance Measurements;Ion Implantation Technology–92;1993

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