Control of surface charging during high current ion implantation-Reference-Cited by-同舟云学术

Control of surface charging during high current ion implantation

Published:1989-02 Issue: Volume:37-38 Page:555-558
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Current M.I.,Bhattacharyya A.,Khid M.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference23 articles.

1. presented at this Conference 7th Int. Conf. on Ion Implantation Technology;Keenan,1988

2. these Proceedings 7th Int. Conf. on Ion Implantation Technology;Felch,1989

3. Silicon Valley Implant Users Group, NCC AVS, Box 1169, Livermore, CA 94550 USA.

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Evaluation of charging damage test structures for ion implantation processes;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1999-07

3. Surface charge control during high-current ion implantation: characterization with CHARM-2 sensors;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1995-03

4. Charging Effect of Ion Implantation on Glass;Japanese Journal of Applied Physics;1993-11-15

5. Reliability issues concerning thin gate SiO2 and SiO2/Si interface for ULSI applications;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1993-04