Surface charge control during high-current ion implantation: characterization with CHARM-2 sensors

Author:

Current Michael I,Lukaszek Wes,Vella Michael C,Tripsas Nicholas H

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference20 articles.

1. Proc. 1994 IEEE Int. Reliability Physics Symp.;Schuegraf,1994

2. Process‐Induced Gate Oxide Charge Collector Damage

3. Control of surface charging during high current ion implantation

4. UC Berkeley Extension Short Course on Wafer Charging Effects in Ion Implantation Processing;Vella;LBL report LBL-34970,1993

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1. Etching of glass, silicon, and silicon dioxide using negative ionic liquid ion sources;Journal of Vacuum Science & Technology B;2018-09

2. Ion Implantation;Handbook of Semiconductor Manufacturing Technology, Second Edition;2007-07-09

3. Charging of substrates irradiated by particle beams;Applied Physics Letters;1997-12

4. Ion beams in silicon processing and characterization;Journal of Applied Physics;1997-05-15

5. Ion implantation for silicon device manufacturing: A vacuum perspective;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1996-05

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