Lattice site location of Te in GaAs
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference14 articles.
1. Mössbauer search for the DX-center
2. Evolution of Defect Structures around Te Implanted in GaAs during Solid Phase Epitaxial Regrowth
3. Implantation temperature dependence of electrical activation, solubility, and diffusion of implanted Te, Cd, and Sn in GaAs
4. Electron Localization by a Metastable Donor Level inn−GaAs: A New Mechanism Limiting the Free-Carrier Density
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