Mössbauer search for the DX-center-Reference-Cited by-同舟云学术

Mössbauer search for the DX-center

Published:1989-03 Issue:1-4 Volume:47-48 Page:85-94
ISSN:0304-3834
Container-title:Hyperfine Interactions
language:en
Short-container-title:Hyperfine Interact

Author:

Langouche G.

Publisher

Springer Science and Business Media LLC

Subject

Physical and Theoretical Chemistry,Condensed Matter Physics,Nuclear and High Energy Physics,Atomic and Molecular Physics, and Optics

Link

http://link.springer.com/content/pdf/10.1007/BF02351601.pdf

Reference27 articles.

1. A review on the use of Mössbauer spectroscopy to study defects in semiconductors is given in: G. Langouche,Mössbauer Spectroscopy Applied to Inorganic Chemistry, ed. G. Long and F. Grandjean, Vol. 3 (Plenum Press, New York, 1989) Ch. 10, to be published.

2. D.V. Lang, in:Deep Centers in Semiconductors, ed. S. Pantelides (Gordon and Breach, New York, 1986) Ch. 7.

3. D.V. Lang and R.A. Logan, Phys. Rev. Lett. 39(1977)635.

4. D.V. Lang, R.A. Logan and M. Jaros, Phys. Rev. B19(1979)1015.

5. P.M. Mooney, in:Defects in Electronic Materials, ed. M. Stavola, S.J. Pearton and G. Davies (Materials Research Society Symposia Proceedings 104, 1988) p. 561.

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