Subject
Instrumentation,Nuclear and High Energy Physics
Cited by
10 articles.
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1. Dose rate and thermal budget optimization for ultrashallow junctions formed by low-energy (2–5 keV) ion implantation;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1996-01
2. Computer simulation study of low energy boron channeling in silicon;Radiation Effects and Defects in Solids;1996-01
3. Low energy B-channeling in Si;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1994-05
4. SIMS-characterization of ultra shallow boron-profiles after BF 2 + -and B+-low-energy-implantation in silicon;Fresenius' Journal of Analytical Chemistry;1994
5. Computer simulation studies of low energy B implantation into amorphous and crystalline silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1993-10